MMBT3904 [BL Galaxy Electrical]
NPN SWITCHING TRANSISTOR; NPN开关晶体管
| 型号： | MMBT3904 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | NPN SWITCHING TRANSISTOR |
| 文件： | 总4页 (文件大小：262K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BL Galaxy Electrical
Production specification
NPN SWITCHING TRANSISTOR
MMBT3904
FEATURES
Pb
Lead-free
z
Epitaxial planar die construction.
Complementary PNP type available
(MMBT3906).
z
z
z
Collector Current Capability Ic=200mA.
Collector-emitter Voltage VCEO=40V.
APPLICATIONS
z
General switching and amplification
SOT-23
ORDERING INFORMATION
Type No.
Marking
1AM
Package Code
SOT-23
MMBT3904
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
open emitter
open base
MIN.
MAX.
UNIT
V
collector-base voltage
60
40
6
-
VCBO
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
-
V
open collector
-
V
-
200
200
100
250
+150
150
+150
mA
mA
mA
mW
°C
-
ICM
-
IBM
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb≤25°C
-
Ptot
Tstg
Tj
-65
-
°C
-65
°C
Tamb
Note Transistor mounted on an FR4 printed-circuit board.
Document number: BL/SSSTC061
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
NPN SWITCHING TRANSISTOR
MMBT3904
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
ICBO collector cut-off current
IEBO
CONDITIONS
MIN. MAX. UNIT
IE = 0; VCB = 30 V
IC = 0; VEB = 6 V
-
-
50
50
nA
nA
emitter cut-off current
V
CE = 1 V;
60
80
-
IC= 0.1mA
-
IC = 1mA
hFE
DC current gain
100
60
300
IC = 10mA
-
-
IC = 50mA
30
IC = 100mA
collector-emitter saturation
voltage
IC = 10mA; IB = 1mA
IC = 50mA; IB = 5mA
IC = 10mA; IB = 1mA
IC = 50mA; IB = 5mA
IE = Ie= 0; VCB= 5V;
f = 1MHz
-
200
300
850
950
mV
mV
mV
mV
VCEsat
VBEsat
Cc
-
650
-
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
-
4
8
-
pF
IC = Ic = 0; VBE=500mV;
f =1MHz
Ce
-
300
-
pF
IC =10mA; VCE =20V;
f =100MHz
fT
MHz
dB
IC=100mA; VCE =5V;
RS =1kΩ;f =10Hz to15.7kHz
F
5
Switching times (between 10% and 90% levels);
td
tr
delay time
-
-
-
-
35
35
ns
ns
ns
ns
rise time
I
I
Con=10mA; IBon =1mA;
Boff = -1mA
ts
tf
storage time
200
50
fall time
Note
Pulse test: tp≤300 ms; d≤0.02.
Document number: BL/SSSTC061
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
NPN SWITCHING TRANSISTOR
MMBT3904
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC061
Rev.A
www.galaxycn.com
3
BL Galaxy Electrical
Production specification
NPN SWITCHING TRANSISTOR
MMBT3904
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
A
Dim
A
Min
2.85
1.25
Max
2.95
1.35
E
B
K
B
C
D
E
1.0Typical
0.37
0.35
1.85
0.02
0.43
0.48
1.95
0.1
J
D
G
H
J
G
H
0.1Typical
C
K
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
SOT-23
Shipping
3000/Tape&Reel
MMBT3904
Document number: BL/SSSTC061
Rev.A
www.galaxycn.com
4
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